E., O., E., I., A., K., & A., T. (2022). EFFECT OF ROOM TEMPERATURE ANNEALING ON Ni/4H-SILICON CARBIDE SCHOTTKY CONTACTS AFTER ALPHA-PARTICLE IRRADIATION AT HIGH FLUENCE. SAU Science-Tech Journal, 7(1), 78-89. Retrieved from https://journals.sau.edu.ng/index.php/sjbas/article/view/790