E., Omotoso, et al. EFFECT OF ROOM TEMPERATURE ANNEALING ON Ni/4H-SILICON CARBIDE SCHOTTKY CONTACTS AFTER ALPHA-PARTICLE IRRADIATION AT HIGH FLUENCE. SAU Science-Tech Journal, [S.l.], v. 7, n. 1, p. 78-89, aug. 2022. ISSN 2659-1529. Available at: <https://journals.sau.edu.ng/index.php/sjbas/article/view/790>. Date accessed: 26 nov. 2022.